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GP2T040A120U SemiQ
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GP2T040A120U

Mfr. No: GP2T040A120U
Mfr.: SemiQ
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-3L
Lifecycle: Active
Datasheet: GP2T040A120U Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 52mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3192 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 322W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,724
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 34 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SemiQ manufactures the GP2T040A120U, a sic mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 63A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 52mOhm @ 40A, 20V. This part has a typical lead time of 34 Days from factory and ships with a full manufacturer datasheet available for download. You can source GP2T040A120U through Simplytronix, with fast shipping and verified authenticity.

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