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GP3T080A120H SemiQ
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GP3T080A120H

Mfr. No: GP3T080A120H
Mfr.: SemiQ
Category: SiC MOSFETs
Description: SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L
Lifecycle: Active
Datasheet: GP3T080A120H Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1351 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 147W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,654
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 35 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The GP3T080A120H from SemiQ falls under the sic mosfets category. Technical specifications for this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 32A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 100mOhm @ 10A, 18V. This part has a typical lead time of 35 Days from factory and ships with a full manufacturer datasheet available for download. GP3T080A120H is available through Simplytronix, sourced and verified for authenticity.

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