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GP3T020A120H SemiQ
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GP3T020A120H

Mfr. No: GP3T020A120H
Mfr.: SemiQ
Category: SiC MOSFETs
Description: SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
Lifecycle: Active
Datasheet: GP3T020A120H Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 115A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 25mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 6078 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 429W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,194
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 22 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by SemiQ, the GP3T020A120H is classified under sic mosfets. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 115A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 25mOhm @ 40A, 18V. This part has a typical lead time of 22 Days from factory and ships with a full manufacturer datasheet available for download. Get GP3T020A120H from Simplytronix, shipped same day with a genuine parts guarantee.

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