| Mfr. No: | SCTWA60N120G2-4 |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package |
| Lifecycle: | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 388W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 600 |
| Alternate Packaging | |
| Suggested Replacement | SCT040W120G3-4 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
SCTWA60N120G2-4 is a sic mosfets part produced by STMicroelectronics for use across a range of applications. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 52mOhm @ 30A, 18V. This part has a typical lead time of 0 Days from factory. Order SCTWA60N120G2-4 from Simplytronix for authenticated stock and same-day order processing.