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SCT019HU120G3AG STMicroelectronics
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SCT019HU120G3AG

Mfr. No: SCT019HU120G3AG
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 26mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 4.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 111.2 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2789 pF @ 800 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package HU3PAK
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,066
Units In Stock
📦 Reel
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 252 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SCT019HU120G3AG is a sic mosfets part produced by STMicroelectronics for use across a range of applications. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 90A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 26mOhm @ 40A, 18V. This part has a typical lead time of 252 Days from factory. Order SCT019HU120G3AG from Simplytronix for authenticated stock and same-day order processing.

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