*For representation only.
SCTL35N65G2V
| Mfr. No: | SCTL35N65G2V |
| Mfr.: | STMicroelectronics |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Package / Case | 4-PowerVDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
12,715
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
SCTL35N65G2V is a sic mosfets component manufactured by STMicroelectronics. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 40A (Tc), rds on (max) @ id, vgs: 67mOhm @ 20A, 20V and vgs(th) (max) @ id: 5V @ 1mA. This part has a typical lead time of 126 Days from factory. Simplytronix offers SCTL35N65G2V in stock, verified authentic and ready for same-day dispatch.
