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SCTWA60N120G2-4 STMicroelectronics
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SCTWA60N120G2-4

Mfr. No: SCTWA60N120G2-4
Mfr.: STMicroelectronics
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
Lifecycle: Obsolete
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
FET Feature -
Power Dissipation (Max) 388W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 600
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement SCT040W120G3-4
6,237
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SCTWA60N120G2-4 is a sic mosfets part produced by STMicroelectronics for use across a range of applications. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 52mOhm @ 30A, 18V. This part has a typical lead time of 0 Days from factory. Order SCTWA60N120G2-4 from Simplytronix for authenticated stock and same-day order processing.

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