*For representation only.
GT20N135SRA,S1E
| Mfr. No: | GT20N135SRA,S1E |
| Mfr.: | Toshiba |
| Category: | IGBTs |
| Description: | IGBTs DISCRET IGBT TRANSTR Vces=1350V Ic=40A |
| Datasheet: | GT20N135SRA,S1E Datasheet (PDF) |
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Specifications
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Power - Max | 312 W |
| Switching Energy | -, 700µJ (off) |
| Input Type | Standard |
| Gate Charge | 185 nC |
| Td (on/off) @ 25°C | - |
| Test Condition | 300V, 40A, 39Ohm, 15V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
11,583
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 58 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
As an igbts component, the GT20N135SRA,S1E is manufactured and supplied by Toshiba. Key specifications include IGBT type: -, voltage, collector emitter breakdown: 1350 V, current, collector (ic): 40 A, current, collector pulsed: 80 A, vce(on) (max) @ vge, ic: 2.4V @ 15V, 40A and power, max: 312 W. This part has a typical lead time of 58 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries GT20N135SRA,S1E in stock, backed by a genuine parts guarantee and quick dispatch.
