*For representation only.
GT40WR21,Q
| Mfr. No: | GT40WR21,Q |
| Mfr.: | Toshiba |
| Category: | IGBTs |
| Description: | IGBTs DISCRETE IGBT TRANSISTOR TO-3PN(OS) V=1800 IC=40A |
| Lifecycle: | Active |
| Datasheet: | GT40WR21,Q Datasheet (PDF) |
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Specifications
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 80 A |
| Vce(on) (Max) @ Vge, Ic | 5.9V @ 15V, 40A |
| Power - Max | 375 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
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Product Attributes
| Packaging | Tray |
| Standard Pack Qty | 100 |
5,766
Units In Stock
📦 Tray
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 35 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The GT40WR21,Q, made by Toshiba, belongs to the igbts product category. It features IGBT type: -, voltage, collector emitter breakdown: 1350 V, current, collector (ic): 40 A, current, collector pulsed: 80 A, vce(on) (max) @ vge, ic: 5.9V @ 15V, 40A and power, max: 375 W. This part has a typical lead time of 35 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GT40WR21,Q for same-day shipping with genuine parts guaranteed.
