| Mfr. No: | GT50JR21(STA1,E,S) |
| Mfr.: | Toshiba |
| Category: | IGBTs |
| Description: | IGBTs Pb-F IGBT / TRANSISTOR TO-3PN(OS) Ic=50A V=600 F=60HZ |
| Lifecycle: | Active |
| Datasheet: | GT50JR21(STA1,E,S) Datasheet (PDF) |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Power - Max | 230 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
| Packaging | Tray |
| Standard Pack Qty | 25 |
| Category | IGBTs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 30 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The GT50JR21(STA1,E,S), made by Toshiba, belongs to the igbts product category. This part is specified with IGBT type: -, voltage, collector emitter breakdown: 600 V, current, collector (ic): 50 A, current, collector pulsed: 100 A, vce(on) (max) @ vge, ic: 2V @ 15V, 50A and power, max: 230 W. This part has a typical lead time of 30 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GT50JR21(STA1,E,S) for same-day shipping with genuine parts guaranteed.