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SICW025N065H-BP Micro Commercial Components (MCC)
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SICW025N065H-BP

Mfr. No: SICW025N065H-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET,TO-247AB
Datasheet: SICW025N065H-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.5V @ 50mA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 5740 pF @ 400 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,909
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle Factory Special Order
Lead Time 252 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Micro Commercial Components (MCC) manufactures the SICW025N065H-BP, a sic mosfets part used in electronic assemblies. Its datasheet lists FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 107A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 30mOhm @ 50A, 18V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. You can source SICW025N065H-BP through Simplytronix, with fast shipping and verified authenticity.

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