Search Products

Menu
SICW025N065H4-BP Micro Commercial Components (MCC)
*For representation only.

SICW025N065H4-BP

Mfr. No: SICW025N065H4-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET,TO-247-4
Lifecycle: Active
Datasheet: SICW025N065H4-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 107A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.5V @ 50mA
Gate Charge (Qg) (Max) @ Vgs 275 nC @ 18 V
Vgs (Max) +18V, -5V
Input Capacitance (Ciss) (Max) @ Vds 5740 pF @ 400 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,145
Units In Stock
📦 Bulk
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle Factory Special Order
Lead Time 252 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Manufactured by Micro Commercial Components (MCC), the SICW025N065H4-BP is classified under sic mosfets. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 107A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 30mOhm @ 50A, 18V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. Get SICW025N065H4-BP from Simplytronix, shipped same day with a genuine parts guarantee.

Similar Products