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SICW100N065H4-BP Micro Commercial Components (MCC)
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SICW100N065H4-BP

Mfr. No: SICW100N065H4-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET,TO-247-4
Lifecycle: Active
Datasheet: SICW100N065H4-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 130mOhm @ 12A, 20V
Vgs(th) (Max) @ Id 4.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 400 V
FET Feature -
Power Dissipation (Max) 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
3,706
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle Factory Special Order
Lead Time 252 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Micro Commercial Components (MCC) manufactures the SICW100N065H4-BP, a sic mosfets part used in electronic assemblies. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 32A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 130mOhm @ 12A, 20V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. You can source SICW100N065H4-BP through Simplytronix, with fast shipping and verified authenticity.

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