*For representation only.
GP3T016A120H
| Mfr. No: | GP3T016A120H |
| Mfr.: | SemiQ |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L |
| Lifecycle: | Active |
| Datasheet: | GP3T016A120H Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 132A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 50A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 6779 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 484W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
5,970
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
The GP3T016A120H, made by SemiQ, belongs to the sic mosfets product category. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 132A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 23mOhm @ 50A, 18V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks GP3T016A120H for same-day shipping with genuine parts guaranteed.
