*For representation only.
GP2T030A170H
| Mfr. No: | GP2T030A170H |
| Mfr.: | SemiQ |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET 1700V, 30mohm TO-247-4L, Industrial |
| Lifecycle: | Active |
| Datasheet: | GP2T030A170H Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 60A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6202 pF @ 1200 V |
| FET Feature | - |
| Power Dissipation (Max) | 564W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
7,685
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
GP2T030A170H is a sic mosfets component manufactured by SemiQ. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 83A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 36mOhm @ 60A, 20V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers GP2T030A170H in stock, verified authentic and ready for same-day dispatch.
